A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM

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Title: A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM
 
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Subject: Science
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Date: May 30, 2007
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In Ru MIM capacitor, Ru is adopted for bottom electrode, Ta205 for dielectric and TiN for Top electrode material. Concave capacitor structure is believed to have more margin in extendibility. PROCESS SCHEME ArF photo-resist which is not so “resistant” to normal etching chemistry needs noble hard mask etching scheme or resist hardening technology such as E-Beam curing, which will be summarized elsewhere[4]...
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Concave capacitor structure is believed to have more margin in extendibility. PROCESS SCHEME ArF photo-resist which is not so “resistant” to normal etching chemistry needs noble hard mask etching scheme or resist hardening technology such as E-Beam curing, which will be summarized elsewhere[4]...
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