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Title: A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM

Essay Details

Subject: Science
Author: Jessica A
Date: February 21, 2016
Level:
Grade: A
Length: 3 / 887
No of views: 0
Essay rating: good 0, average 0, bad 0 (total score: 0)

Essay text:

Cell transistor with W gate technology exhibits a sufficient saturation current(bP) of -40~1A with threshold voltage (Vbat) of 0.9V and satisfactory ring oscillator delay characteristics of - 5Ops. INTRODUCTION The first principle in DRAM integration would be miniaturization of cell in the viewpoint of cost reduction...

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In this study, we have integrated 0.08pm2-sized 8F2 stack DRAM cell. It is believed that this cell is smallest 8F2 cell that has been integrated ever. We have employed ArF patteming to get 100nm-cell resolution. Automatic OPC and manual OPC is applied to get expected CD for corelperi Tr with 0...

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