Click here to return to old version

Title: A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM

Essay Details

Subject: Science
Author: Jessica A
Date: February 21, 2016
Grade: A
Length: 3 / 887
No of views: 0
Essay rating: good 0, average 0, bad 0 (total score: 0)

Essay text:

Cell transistor with W gate technology exhibits a sufficient saturation current(bP) of -40~1A with threshold voltage (Vbat) of 0.9V and satisfactory ring oscillator delay characteristics of - 5Ops. INTRODUCTION The first principle in DRAM integration would be miniaturization of cell in the viewpoint of cost reduction...

Showed first 250 characters

Do you need an essay?

Here are the options you can choose from:

  • Order plagiarism free custom written essay
  • All essays are written from scratch by professional writers according to your instructions and delivered to your email on time
  • Prices start from $12.99/page

Do you need many essays?

FULL access to essays database

  • This option gives you the immediate access to all 184 988 essays
  • You get access to all the essays and can view as many of them as you like for as little as $28.95/month

In this study, we have integrated 0.08pm2-sized 8F2 stack DRAM cell. It is believed that this cell is smallest 8F2 cell that has been integrated ever. We have employed ArF patteming to get 100nm-cell resolution. Automatic OPC and manual OPC is applied to get expected CD for corelperi Tr with 0...

Showed next 250 characters

If you cannot find any suitable paper on our site, which happens very rarely, you can always order custom written paper which will be written from scratch by our professional writers and deliver to you on requested time.
  • Your research paper is written by certified writers
  • Your requirements and targets are always met
  • You are able to control the progress of your writing assignment
  • You get a chance to become an excellent student!

Total price: $10.00


Common topics in this essay:


Similar Essays: